121
GaAlAs Infrared Emitting Diodes
Long T-1 (3 mm) Plastic Package -- 880 nm
VTE3372LA, 74LA
PACKAGE DIMENSIONS
inch (mm)
CASE 50A
Long T-1 (3 mm)
CHIP SIZE: .011" x .011"
DESCRIPTION
This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small
area, GaAlAs, 880 nm, high efficiency IRED die.
ABSOLUTE MAXIMUM RATINGS @ 25C
(unless otherwise noted)
Maximum Temperatures
Storage and Operating:
-40C to 100C
Continuous Power Dissipation:
100 mW
Derate above 30C:
1.43 mW/C
Maximum Continuous Current:
50 mA
Derate above 30C:
0.71 mA/C
Peak Forward Current, 10 s, 100 pps:
2.5 A
Temp. Coefficient of Power Output (Typ.):
-.8%/C
Maximum Reverse Voltage:
5.0V
Maximum Reverse Current @ V
R
= 5V:
10 A
Peak Wavelength (Typical):
880 nm
Junction Capacitance @ 0V, 1 MHz (Typ.):
14 pF
Response Time @ I
F
= 20 mA
Rise:1.0 s
Fall: 1.0 s
Lead Soldering Temperature:
260C
(1.6 mm from case, 5 seconds max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25C
(See also GaAlAs curves, pages 108-110)
Refer to General Product Notes, page 2.
Part Number
Output
Forward Drop
Half Power Beam
Angle
Irradiance
Radiant
Intensity
Total Power
Test
Current
V
F
E
e
Condition
I
e
P
O
I
FT
@ I
FT
1/2
mW/cm
2
distance
Diameter
mW/sr
mW
mA
(Pulsed)
Volts
Typ.
Min.
Typ.
mm
mm
Min.
Typ.
Typ.
Max.
VTE3372LA
2.0
2.6
10.16
2.1
2.0
3.0
20
1.3
1.8
10
VTE3374LA
4.0
5.2
10.16
2.1
4.1
5.0
20
1.3
1.8
10
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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